Технічний опис IS61DDB21M18C-250M3L ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 1Mx18bit; 1.8V; LFBGA165; parallel; 0÷70°C, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory organisation: 1Mx18bit, Case: LFBGA165, Kind of interface: parallel, Memory capacity: 18Mb, Mounting: SMD, Operating temperature: 0...70°C, Kind of package: in-tray; tube, Operating voltage: 1.8V.
Інші пропозиції IS61DDB21M18C-250M3L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IS61DDB21M18C-250M3L | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1Mx18bit; 1.8V; LFBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Case: LFBGA165 Kind of interface: parallel Memory capacity: 18Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V |
товар відсутній |
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| IS61DDB21M18C-250M3L | Виробник : ISSI |
 SRAM 18Mb, DDR II (Burst of 2) CIO, Sync SRAM, 1M x 18, 165 Ball FBGA (15x17 mm), RoHS |
товар відсутній |
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| IS61DDB21M18C-250M3L | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1Mx18bit; 1.8V; LFBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Case: LFBGA165 Kind of interface: parallel Memory capacity: 18Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V |
товар відсутній |