Технічний опис IS61LV1282410TQLI ISSI
Description: IC SRAM 3MBIT PARALLEL 100TQFP, Packaging: Tray, Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 3Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Part Status: Obsolete, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 128K x 24.
Інші пропозиції IS61LV1282410TQLI
| Фото | Назва | Виробник | Інформація |
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IS61LV12824-10TQLI | Виробник : ISSI |
 SRAM Chip Async Single 3.3V 3M-bit 128K x 24-bit 10ns 100-Pin TQFP |
товару немає в наявності |
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%20Renders/706;-100LQFP-1.6-14x20;-;-100.jpg "IS61LV12824-10TQLI") |
IS61LV12824-10TQLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 3MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 3Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 100-LQFP (14x20) Part Status: Obsolete Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 128K x 24 |
товару немає в наявності |
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IS61LV12824-10TQLI | Виробник : ISSI |
SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v |
товару немає в наявності |
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IS61LV12824-10TQLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 10ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 3Mb SRAM Memory organisation: 128kx24bit Operating voltage: 3.3V Access time: 10ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |