Продукція > ISSI, INTEGRATED SILICON SOLUTION INC > IS66WV51216EBLL-55BLI
IS66WV51216EBLL-55BLI

IS66WV51216EBLL-55BLI ISSI, Integrated Silicon Solution Inc

66WV51216EALL-EBLL.pdf
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC PSRAM 8MBIT PARALLEL 48TFBGA
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-TFBGA (6x8)
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 16
Packaging: Tray
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Технічний опис IS66WV51216EBLL-55BLI ISSI, Integrated Silicon Solution Inc

Description: IC PSRAM 8MBIT PARALLEL 48TFBGA, Access Time: 55 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 55ns, Part Status: Active, Supplier Device Package: 48-TFBGA (6x8), Memory Format: PSRAM, Technology: PSRAM (Pseudo SRAM), Voltage - Supply: 2.5V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFBGA, DigiKey Programmable: Not Verified, Memory Organization: 512K x 16, Packaging: Tray.