IS66WVH4M8FALL-200B1LI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 32MB, HYPERRAM, 8MBX8, 1.8V, 200
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Memory Organization: 4M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Supplier Device Package: 24-TFBGA (6x8)
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Технічний опис IS66WVH4M8FALL-200B1LI-TR ISSI, Integrated Silicon Solution Inc
Description: 32MB, HYPERRAM, 8MBX8, 1.8V, 200, Memory Format: PSRAM, Clock Frequency: 200 MHz, Technology: PSRAM (Pseudo SRAM), Voltage - Supply: 1.7V ~ 2V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 32Mbit, Mounting Type: Surface Mount, Package / Case: 24-TBGA, Packaging: Tape & Reel (TR), Memory Organization: 4M x 8, Access Time: 35 ns, Memory Interface: HyperBus, Write Cycle Time - Word, Page: 35ns, Supplier Device Package: 24-TFBGA (6x8).