ISL6612BECB-T

ISL6612BECB-T Renesas Electronics America Inc


isl6612b-13b.pdf
Виробник: Renesas Electronics America Inc
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
High Side Voltage - Max (Bootstrap): 36 V
Input Type: Non-Inverting
Voltage - Supply: 7V ~ 13.2V
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.25A, 2A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 26ns, 18ns
Supplier Device Package: 8-SOIC-EP
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис ISL6612BECB-T Renesas Electronics America Inc

Description: IC GATE DRVR HALF-BRIDGE 8SOIC, High Side Voltage - Max (Bootstrap): 36 V, Input Type: Non-Inverting, Voltage - Supply: 7V ~ 13.2V, Operating Temperature: 0°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 1.25A, 2A, Gate Type: N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Synchronous, Rise / Fall Time (Typ): 26ns, 18ns, Supplier Device Package: 8-SOIC-EP.