IV1D06006O2 Inventchip
Виробник: Inventchip
Description: DIODE SIL CARB 650V 17.4A TO220
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 17.4A
Capacitance @ Vr, F: 212pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 296.67 грн |
| 50+ | 159.66 грн |
| 100+ | 146.78 грн |
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Технічний опис IV1D06006O2 Inventchip
Description: DIODE SIL CARB 650V 17.4A TO220, Current - Reverse Leakage @ Vr: 10 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2, Current - Average Rectified (Io): 17.4A, Capacitance @ Vr, F: 212pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.