IV1D12010O2 Inventchip
Виробник: InventchipDescription: DIODE SIL CARB 1.2KV 28A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 721.46 грн |
| 10+ | 595.43 грн |
| 100+ | 496.17 грн |
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Технічний опис IV1D12010O2 Inventchip
Description: DIODE SIL CARB 1.2KV 28A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 575pF @ 1V, 1MHz, Current - Average Rectified (Io): 28A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.