IV1D12020T2 Inventchip
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 54A TO247-2
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 54A
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1366.88 грн |
| 10+ | 1159.87 грн |
| 100+ | 1003.10 грн |
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Технічний опис IV1D12020T2 Inventchip
Description: DIODE SIL CARB 1.2KV 54A TO247-2, Current - Reverse Leakage @ Vr: 120 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 54A, Capacitance @ Vr, F: 1114pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.