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IV1Q12160T4

IV1Q12160T4 Inventchip

1604555975325242.pdf
Виробник: Inventchip
Description: SIC MOSFET, 1200V 160MOHM, TO-24
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
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Технічний опис IV1Q12160T4 Inventchip

Description: SIC MOSFET, 1200V 160MOHM, TO-24, Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 2.9V @ 1.9mA, Power Dissipation (Max): 138W (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.