IV2Q06025D7Z Inventchip
Виробник: Inventchip
Description: GEN 2, SIC MOSFET, 650V 25MOHM,
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-263-7
Packaging: Tube
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Технічний опис IV2Q06025D7Z Inventchip
Description: GEN 2, SIC MOSFET, 650V 25MOHM,, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 4.5V @ 12mA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V, Current - Continuous Drain (Id) @ 25°C: 111A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-263-7, Packaging: Tube.