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IV2Q171R0T3

IV2Q171R0T3 Inventchip

IV2Q171R0T3.pdf Виробник: Inventchip
Description: GEN2, SIC MOSFET, 1700V 1000MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 910mOhm @ 1A, 18V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 380uA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 1000 V
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термін постачання 21-31 дні (днів)
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Технічний опис IV2Q171R0T3 Inventchip

Description: GEN2, SIC MOSFET, 1700V 1000MOHM, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), Rds On (Max) @ Id, Vgs: 910mOhm @ 1A, 18V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 380uA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 1000 V.