IXFC14N80P IXYS

Description: MOSFET N-CH 800V 8A ISOPLUS220, Packaging: Tube, Package / Case: ISOPLUS220™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 770mOhm @ 7A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: ISOPLUS220™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V.