IXFC26N50 IXYS

Description: MOSFET N-CH 500V 23A ISOPLUS220, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: ISOPLUS220™, Vgs(th) (Max) @ Id: 4V @ 4mA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: ISOPLUS220™, Packaging: Tube.