IXFH60N60X2A IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 60A; Idm: 120A; 780W, Type of transistor: N-MOSFET, Technology: HiPerFET™; X2-Class, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 60A, Pulsed drain current: 120A, Power dissipation: 780W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 52mΩ, Mounting: THT, Gate charge: 108nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ultra junction x-class, Reverse recovery time: 180ns, Application: automotive industry.