IXFK35N50 IXYS

littelfuse_discrete_mosfets_n-channel_hiperfets_ixfk33n50_datasheet.pdf.pdf

Виробник: IXYS
Description: MOSFET N-CH 500V 35A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube

товару немає в наявності

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис IXFK35N50 IXYS

Description: MOSFET N-CH 500V 35A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 4V @ 4mA, Power Dissipation (Max): 416W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 16.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.