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IXFR26N60Q

IXFR26N60Q IXYS


98727.pdf Виробник: IXYS
Description: MOSFET N-CH 600V 23A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
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Технічний опис IXFR26N60Q IXYS

Description: MOSFET N-CH 600V 23A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: ISOPLUS247™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V.