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IXGQ50N60B4D1

IXGQ50N60B4D1 IXYS

DS100318C(IXGQ-H50N60B4D1).pdf Виробник: IXYS
Description: IGBT 600V 100A 300W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-3P
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/330ns
Switching Energy: 930µJ (on), 1mJ (off)
Test Condition: 400V, 36A, 10Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
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Технічний опис IXGQ50N60B4D1 IXYS

Description: IGBT 600V 100A 300W TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A, Supplier Device Package: TO-3P, IGBT Type: PT, Td (on/off) @ 25°C: 37ns/330ns, Switching Energy: 930µJ (on), 1mJ (off), Test Condition: 400V, 36A, 10Ohm, 15V, Gate Charge: 110 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 230 A, Power - Max: 300 W.