Технічний опис IXTA06N120P-TRL Littelfuse
Description: MOSFET N-CH 1200V 600MA TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Tc), Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 50µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V.
Інші пропозиції IXTA06N120P-TRL
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IXTA06N120P TRL | Виробник : Ixys Corporation | Trans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
||
IXTA06N120P-TRL | Виробник : Littelfuse | Trans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
||
IXTA06N120P-TRL | Виробник : IXYS |
Description: MOSFET N-CH 1200V 600MA TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V |
товар відсутній |
||
IXTA06N120P-TRL | Виробник : IXYS |
Description: MOSFET N-CH 1200V 600MA TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V |
товар відсутній |
||
IXTA06N120P-TRL | Виробник : IXYS | MOSFET IXTA06N120P TRL |
товар відсутній |