IXTA08N120P-TRL IXYS

Description: MOSFET N-CH 1200V 800MA TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 25Ohm @ 400mA, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V.