Технічний опис IXTA270N04T4-7 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 270A, Power dissipation: 375W, Case: TO263-7, On-state resistance: 2.2mΩ, Mounting: SMD, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: thrench gate power mosfet, Gate charge: 182nC, Reverse recovery time: 48ns.
Інші пропозиції IXTA270N04T4-7
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IXTA270N04T4-7 | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 375W Case: TO263-7 On-state resistance: 2.2mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Gate charge: 182nC Reverse recovery time: 48ns |
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