IXTD2N60P-1J IXYS
Виробник: IXYS
Description: MOSFET N-CH 600V 2A DIE
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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Технічний опис IXTD2N60P-1J IXYS
Description: MOSFET N-CH 600V 2A DIE, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 56W (Tc), Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.