IXTH06N220P3HV IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.4nC
Reverse recovery time: 1.1µs
Drain current: 0.38A
Pulsed drain current: 1.2A
Gate-source voltage: ±20V
On-state resistance: 80Ω
Power dissipation: 104W
Drain-source voltage: 2.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar3™
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис IXTH06N220P3HV IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A, Mounting: THT, Features of semiconductor devices: standard power mosfet, Case: TO247HV, Kind of package: tube, Polarisation: unipolar, Gate charge: 10.4nC, Reverse recovery time: 1.1µs, Drain current: 0.38A, Pulsed drain current: 1.2A, Gate-source voltage: ±20V, On-state resistance: 80Ω, Power dissipation: 104W, Drain-source voltage: 2.2kV, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: Polar3™, кількість в упаковці: 1 шт.
Інші пропозиції IXTH06N220P3HV
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IXTH06N220P3HV | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A Mounting: THT Features of semiconductor devices: standard power mosfet Case: TO247HV Kind of package: tube Polarisation: unipolar Gate charge: 10.4nC Reverse recovery time: 1.1µs Drain current: 0.38A Pulsed drain current: 1.2A Gate-source voltage: ±20V On-state resistance: 80Ω Power dissipation: 104W Drain-source voltage: 2.2kV Kind of channel: enhancement Type of transistor: N-MOSFET Technology: Polar3™ |
товару немає в наявності |