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IXTH06N220P3HV

IXTH06N220P3HV IXYS

pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8 Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.4nC
Reverse recovery time: 1.1µs
Drain current: 0.38A
Pulsed drain current: 1.2A
Gate-source voltage: ±20V
On-state resistance: 80Ω
Power dissipation: 104W
Drain-source voltage: 2.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar3™
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Технічний опис IXTH06N220P3HV IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A, Mounting: THT, Features of semiconductor devices: standard power mosfet, Case: TO247HV, Kind of package: tube, Polarisation: unipolar, Gate charge: 10.4nC, Reverse recovery time: 1.1µs, Drain current: 0.38A, Pulsed drain current: 1.2A, Gate-source voltage: ±20V, On-state resistance: 80Ω, Power dissipation: 104W, Drain-source voltage: 2.2kV, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: Polar3™.