IXTN80N30L2 IXYS

Category: Transistor modules MOSFET, Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A, Case: SOT227B, Type of semiconductor module: MOSFET transistor, Kind of channel: enhancement, Technology: Linear L2™, Mechanical mounting: screw, Electrical mounting: screw, Polarisation: unipolar, Reverse recovery time: 485ns, Gate charge: 660nC, On-state resistance: 38mΩ, Gate-source voltage: ±30V, Drain current: 80A, Pulsed drain current: 200A, Drain-source voltage: 300V, Power dissipation: 735W, Semiconductor structure: single transistor.