Технічний опис IXTP3N60P IXYS
Description: MOSFET N-CH 600V 3A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 50µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 411 pF @ 25 V.
Інші пропозиції IXTP3N60P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTP3N60P | Виробник : Littelfuse |
 Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220 |
товар відсутній |
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IXTP3N60P | Виробник : IXYS |
Description: MOSFET N-CH 600V 3A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 50µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 411 pF @ 25 V |
товар відсутній |