IXTQ200N06P IXYS
Виробник: IXYS
Description: MOSFET N-CH 60V 200A TO3P
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 714W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 400A, 15V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
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Технічний опис IXTQ200N06P IXYS
Description: MOSFET N-CH 60V 200A TO3P, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 714W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 400A, 15V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel.