IXTY1N100P-TRL IXYS
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1A; 50W; DPAK,TO252AA; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Gate charge: 15.5nC
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
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Технічний опис IXTY1N100P-TRL IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; 1kV; 1A; 50W; DPAK,TO252AA; 750ns, Mounting: SMD, Type of transistor: N-MOSFET, Gate-source voltage: 20V, Case: DPAK; TO252AA, On-state resistance: 15Ω, Reverse recovery time: 750ns, Power dissipation: 50W, Gate charge: 15.5nC, Drain current: 1A, Kind of channel: enhancement, Drain-source voltage: 1kV.


