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IXXH30N65B4D1

IXXH30N65B4D1 IXYS

IXXH30N65B4D1.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
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Технічний опис IXXH30N65B4D1 IXYS

Category: THT IGBT transistors, Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3, Type of transistor: IGBT, Technology: GenX4™; Trench; XPT™, Power dissipation: 230W, Case: TO247-3, Mounting: THT, Gate charge: 52nC, Kind of package: tube, Collector current: 30A, Collector-emitter voltage: 650V, Pulsed collector current: 146A, Turn-on time: 65ns, Turn-off time: 206ns, Gate-emitter voltage: ±20V.