IXYH75N120B4 IXYS
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
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Технічний опис IXYH75N120B4 IXYS
Description: IGBT, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 66 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 22ns/182ns, Switching Energy: 4.5mJ (on), 2.7mJ (off), Test Condition: 600V, 50A, 3Ohm, 15V, Gate Charge: 157 nC, Part Status: Active, Current - Collector (Ic) (Max): 240 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 440 A, Power - Max: 1150 W.
Інші пропозиції IXYH75N120B4
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXYH75N120B4 | Виробник : IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 66 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 22ns/182ns Switching Energy: 4.5mJ (on), 2.7mJ (off) Test Condition: 600V, 50A, 3Ohm, 15V Gate Charge: 157 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 440 A Power - Max: 1150 W |
товар відсутній |
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IXYH75N120B4 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3 Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 1.15kW Case: TO247; TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 157nC Kind of package: tube Turn-on time: 24ns Turn-off time: 235ns |
товар відсутній |