IXYP10N65C3 IXYS
Виробник: IXYS
Description: IGBT PT 650V 30A TO-220-3
Power - Max: 160 W
Current - Collector Pulsed (Icm): 54 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 18 nC
Test Condition: 400V, 10A, 50Ohm, 15V
Switching Energy: 240µJ (on), 110µJ (off)
Td (on/off) @ 25°C: 20ns/77ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис IXYP10N65C3 IXYS
Description: IGBT PT 650V 30A TO-220-3, Power - Max: 160 W, Current - Collector Pulsed (Icm): 54 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 30 A, Part Status: Active, Gate Charge: 18 nC, Test Condition: 400V, 10A, 50Ohm, 15V, Switching Energy: 240µJ (on), 110µJ (off), Td (on/off) @ 25°C: 20ns/77ns, IGBT Type: PT, Supplier Device Package: TO-220-3, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IXYP10N65C3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IXYP10N65C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 18nC Turn-on time: 44ns Turn-off time: 128ns Collector current: 10A Pulsed collector current: 54A Gate-emitter voltage: ±20V Collector-emitter voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYP10N65C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 18nC
Turn-on time: 44ns
Turn-off time: 128ns
Collector current: 10A
Pulsed collector current: 54A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 18nC
Turn-on time: 44ns
Turn-off time: 128ns
Collector current: 10A
Pulsed collector current: 54A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.


