Відгуки про товар
Написати відгук
Технічний опис IXYP50N65C3 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3, Type of transistor: IGBT, Technology: GenX3™; Planar; XPT™, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 600W, Case: TO220-3, Gate-emitter voltage: ±20V, Mounting: THT, Kind of package: tube, Pulsed collector current: 250A, Turn-on time: 56ns, Turn-off time: 145ns, Gate charge: 86nC.
Інші пропозиції IXYP50N65C3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXYP50N65C3 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 250A Turn-on time: 56ns Turn-off time: 145ns Gate charge: 86nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYP50N65C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 145ns
Gate charge: 86nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 145ns
Gate charge: 86nC
товару немає в наявності
В кошику
од. на суму грн.