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JAN1N1128A

JAN1N1128A Microchip Technology

1N1124A,RA,1N1126A,RA,1N1128A,RA_1N3649,R,1N3650,R.pdf Виробник: Microchip Technology
Description: DIODE GEN PURP 600V DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: MIL-PRF-19500/260
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Технічний опис JAN1N1128A Microchip Technology

Description: DIODE GEN PURP 600V DO203AA, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Supplier Device Package: DO-203AA (DO-4), Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Qualification: MIL-PRF-19500/260.