JAN1N5611 Microchip Technology
Виробник: Microchip TechnologyDescription: TVS DIODE 40.3VWM 63.5VC G AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.3V
Supplier Device Package: G, Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.7V
Voltage - Clamping (Max) @ Ipp: 63.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/434
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Технічний опис JAN1N5611 Microchip Technology
Description: TVS DIODE 40.3VWM 63.5VC G AXIAL, Packaging: Bulk, Package / Case: G, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 24A, Voltage - Reverse Standoff (Typ): 40.3V, Supplier Device Package: G, Axial, Unidirectional Channels: 1, Voltage - Breakdown (Min): 43.7V, Voltage - Clamping (Max) @ Ipp: 63.5V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/434.