JAN1N5768 Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 300MA 10CFLATPACK
Current - Reverse Leakage @ Vr: 100 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 500 mA
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: 10-CFlatPack
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-CFlatPack
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис JAN1N5768 Microchip Technology
Description: DIODE GEN PURP 300MA 10CFLATPACK, Current - Reverse Leakage @ Vr: 100 nA @ 40 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 500 mA, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: 10-CFlatPack, Current - Average Rectified (Io): 300mA, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 40 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 10-CFlatPack, Packaging: Bulk.