JAN1N6121US Microchip Technology
Виробник: Microchip TechnologyDescription: TVS DIODE 32.7VWM 62.06V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.08A
Voltage - Reverse Standoff (Typ): 32.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 38.86V
Voltage - Clamping (Max) @ Ipp: 62.06V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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Технічний опис JAN1N6121US Microchip Technology
Description: TVS DIODE 32.7VWM 62.06V SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 8.08A, Voltage - Reverse Standoff (Typ): 32.7V, Supplier Device Package: B, SQ-MELF, Bidirectional Channels: 1, Voltage - Breakdown (Min): 38.86V, Voltage - Clamping (Max) @ Ipp: 62.06V, Power - Peak Pulse: 500W, Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/516.
Інші пропозиції JAN1N6121US
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| JAN1N6121US | Виробник : Microsemi |
ESD Suppressors / TVS Diodes Transient Voltage Suppressor |
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