JAN1N6150US Microchip Technology
Виробник: Microchip Technology
Description: TVS DIODE 16.7VWM 32.03V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.74A
Voltage - Reverse Standoff (Typ): 16.7V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.86V
Voltage - Clamping (Max) @ Ipp: 32.03V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 16.7VWM 32.03V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.74A
Voltage - Reverse Standoff (Typ): 16.7V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.86V
Voltage - Clamping (Max) @ Ipp: 32.03V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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Технічний опис JAN1N6150US Microchip Technology
Description: TVS DIODE 16.7VWM 32.03V SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, C, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 46.74A, Voltage - Reverse Standoff (Typ): 16.7V, Supplier Device Package: C, SQ-MELF, Bidirectional Channels: 1, Voltage - Breakdown (Min): 19.86V, Voltage - Clamping (Max) @ Ipp: 32.03V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/516.
Інші пропозиції JAN1N6150US
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JAN1N6150US | Виробник : Microsemi |
 ESD Suppressors / TVS Diodes Transient Voltage Suppressor |
товару немає в наявності |