JAN1N6316US/TR Microchip Technology
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/533
Description: DIODE ZENER 4.7V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/533
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис JAN1N6316US/TR Microchip Technology
Description: DIODE ZENER 4.7V 500MW SQ-MELF, Tolerance: ±5%, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 175°C (TJ), Voltage - Zener (Nom) (Vz): 4.7 V, Impedance (Max) (Zzt): 17 Ohms, Supplier Device Package: B, SQ-MELF, Grade: Military, Power - Max: 500 mW, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V, Qualification: MIL-PRF-19500/533.