Технічний опис JAN2N7371 Microsemi
Description: TRANS PNP DARL 100V 0.001A TO254, Packaging: Bulk, Package / Case: TO-254-3, TO-254AA, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V, Supplier Device Package: TO-254, Part Status: Active, Current - Collector (Ic) (Max): 1 mA, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 100 W, Grade: Military, Qualification: MIL-PRF-19500/623.
Інші пропозиції JAN2N7371
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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JAN2N7371 | Виробник : Microchip Technology |
 Trans Darlington PNP 100V 12A 100000mW 3-Pin(3+Tab) TO-254 Tray |
товару немає в наявності |
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| JAN2N7371 | Виробник : Microchip Technology |
Description: TRANS PNP DARL 100V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Grade: Military Qualification: MIL-PRF-19500/623 |
товару немає в наявності |