Технічний опис JANS1N5552US Microsemi
Description: DIODE GEN PURP 600V 3A B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V, Qualification: MIL-PRF-19500/420.
Інші пропозиції JANS1N5552US
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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JANS1N5552US | Виробник : Microchip Technology |
 Diode Switching 600V 5A 2-Pin B-MELF Waffle |
товар відсутній |
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JANS1N5552US | Виробник : Microchip Technology |
Description: DIODE GEN PURP 600V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/420 |
товар відсутній |