JANS1N5552US Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/420
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Технічний опис JANS1N5552US Microchip Technology
Description: DIODE GEN PURP 600V 3A B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V, Qualification: MIL-PRF-19500/420.
Інші пропозиції JANS1N5552US
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| JANS1N5552US | MICROCHIP TECHNOLOGY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 2us; MELF; 1.2V; Ifsm: 100A; Ir: 1uA Mounting: SMD Leakage current: 1µA Case: MELF Type of diode: rectifying Reverse recovery time: 2µs Max. forward impulse current: 100A Max. forward voltage: 1.2V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| JANS1N5552US |
Виробник: MICROCHIP TECHNOLOGY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2us; MELF; 1.2V; Ifsm: 100A; Ir: 1uA
Mounting: SMD
Leakage current: 1µA
Case: MELF
Type of diode: rectifying
Reverse recovery time: 2µs
Max. forward impulse current: 100A
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2us; MELF; 1.2V; Ifsm: 100A; Ir: 1uA
Mounting: SMD
Leakage current: 1µA
Case: MELF
Type of diode: rectifying
Reverse recovery time: 2µs
Max. forward impulse current: 100A
Max. forward voltage: 1.2V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.