Технічний опис JANS2N5415 Microsemi
Description: TRANS PNP 200V 1A TO-5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Supplier Device Package: TO-5, Grade: Military, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 200 V, Power - Max: 750 mW, Qualification: MIL-PRF-19500/485.
Інші пропозиції JANS2N5415
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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JANS2N5415 | Виробник : Microchip Technology |
 Trans GP BJT PNP 200V 1A 750mW 3-Pin TO-5 Tray |
товару немає в наявності |
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| JANS2N5415 | Виробник : Microchip Technology |
Description: TRANS PNP 200V 1A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
товару немає в наявності |