JANTX1N6672 Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
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Технічний опис JANTX1N6672 Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254, Packaging: Bulk, Package / Case: TO-254-3, TO-254AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 150pF @ 10V, 1MHz, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-254, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Current - Reverse Leakage @ Vr: 50 µA @ 240 V, Qualification: MIL-PRF-19500/617.