JANTXV1N3595AUS Microchip Technology
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Qualification: MIL-PRF-19500/241
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Qualification: MIL-PRF-19500/241
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Технічний опис JANTXV1N3595AUS Microchip Technology
Description: DIODE GP 125V 150MA DO213AA, Packaging: Bulk, Package / Case: DO-213AA, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 3 µs, Technology: Standard, Current - Average Rectified (Io): 150mA, Supplier Device Package: DO-213AA, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 125 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA, Current - Reverse Leakage @ Vr: 2 nA @ 125 V, Qualification: MIL-PRF-19500/241.
Інші пропозиції JANTXV1N3595AUS
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| JANTXV1N3595AUS | Виробник : Microchip / Microsemi |
 Diodes - General Purpose, Power, Switching Signal or Computer Diode |
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