JANTXV1N6766R Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 320 V
Description: DIODE GEN PURP 400V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 320 V
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Технічний опис JANTXV1N6766R Microchip Technology
Description: DIODE GEN PURP 400V 12A TO254, Packaging: Bulk, Package / Case: TO-254-3, TO-254AA (Straight Leads), Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 60 ns, Technology: Standard, Capacitance @ Vr, F: 300pF @ 5V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-254, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A, Current - Reverse Leakage @ Vr: 10 µA @ 320 V.