JANTXV2N4854U Microchip Technology
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Part Status: Active
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Part Status: Active
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Технічний опис JANTXV2N4854U Microchip Technology
Description: NPN TRANSISTOR, Packaging: Bulk, Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 600mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: 6-SMD, Part Status: Active.
Інші пропозиції JANTXV2N4854U
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| JANTXV2N4854U | Виробник : Microchip Technology |
 Bipolar Transistors - BJT BJTs |
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