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JANTXV2N5416S Microsemi

Виробник: Microsemi
Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag

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Технічний опис JANTXV2N5416S Microsemi

Description: TRANS PNP 300V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 750 mW, Qualification: MIL-PRF-19500/485.

Інші пропозиції JANTXV2N5416S

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	Jantxv2N5416S	Виробник : Microchip Technology	Description: TRANS PNP 300V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485	товару немає в наявності	В кошику од. на суму грн.