K4B1G1646I-BYMA000 Samsung Semiconductor, Inc.
Виробник: Samsung Semiconductor, Inc.
Description: DDR3-1866 1GB (64MX16)1.07NS CL1
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C
Voltage - Supply: 1.35V
Clock Frequency: 933 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: DDR3-1866 1GB (64MX16)1.07NS CL1
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C
Voltage - Supply: 1.35V
Clock Frequency: 933 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 1082 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 224+ | 228.50 грн |
| 672+ | 201.70 грн |
| 896+ | 183.36 грн |
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Технічний опис K4B1G1646I-BYMA000 Samsung Semiconductor, Inc.
Description: DDR3-1866 1GB (64MX16)1.07NS CL1, Packaging: Tray, Package / Case: 96-TFBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 95°C, Voltage - Supply: 1.35V, Clock Frequency: 933 MHz, Memory Format: DRAM, Memory Interface: Parallel, Memory Organization: 64M x 16, DigiKey Programmable: Not Verified.