K4B4G1646E-BYK000 Samsung Semiconductor, Inc.
Виробник: Samsung Semiconductor, Inc.
Description: DDR3-1600 4GB (256MX16)1.25NS CL
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C
Voltage - Supply: 1.35V
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Description: DDR3-1600 4GB (256MX16)1.25NS CL
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C
Voltage - Supply: 1.35V
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 1505 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 224+ | 212.88 грн |
| 448+ | 197.92 грн |
| 672+ | 183.79 грн |
| 896+ | 165.84 грн |
| 1120+ | 159.21 грн |
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Технічний опис K4B4G1646E-BYK000 Samsung Semiconductor, Inc.
Description: DDR3-1600 4GB (256MX16)1.25NS CL, Packaging: Tray, Package / Case: 96-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 95°C, Voltage - Supply: 1.35V, Clock Frequency: 800 MHz, Memory Format: DRAM, Memory Interface: Parallel, Memory Organization: 256M x 16, DigiKey Programmable: Not Verified.