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KBP105G C2 Taiwan Semiconductor Corporation

KBP101G-KBP107G_Rev.D13_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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Технічний опис KBP105G C2 Taiwan Semiconductor Corporation

Description: BRIDGE RECT 1PHASE 600V 1A KBP, Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, KBP, Packaging: Tube, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Average Rectified (Io): 1 A, Voltage - Peak Reverse (Max): 600 V, Supplier Device Package: KBP, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ).