Продукція > GENESIC SEMICONDUCTOR > KBPM210G

KBPM210G GeneSiC Semiconductor

KBPM206G%7EKBPM210G.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
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Мінімальне замовлення: 3000 шт
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Технічний опис KBPM210G GeneSiC Semiconductor

Description: BRIDGE RECT 1PHASE 1KV 2A KBPM, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Current - Average Rectified (Io): 2 A, Voltage - Peak Reverse (Max): 1 kV, Supplier Device Package: KBPM, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, KBPM, Packaging: Bulk.