KBU606G T0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Tray
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Технічний опис KBU606G T0G Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 6A KBU, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A, Current - Average Rectified (Io): 6 A, Voltage - Peak Reverse (Max): 800 V, Part Status: Obsolete, Supplier Device Package: KBU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, KBU, Packaging: Tray.