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KBU802G T0G

KBU802G T0G Taiwan Semiconductor Corporation

KBU80xG_H14_D1409012_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 8A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Tray
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Технічний опис KBU802G T0G Taiwan Semiconductor Corporation

Description: BRIDGE RECT 1PHASE 100V 8A KBU, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Average Rectified (Io): 8 A, Voltage - Peak Reverse (Max): 100 V, Supplier Device Package: KBU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, KBU, Packaging: Tray.